Achieving water-floatable photocatalyst on recycled bamboo chopsticks.

Disposable bamboo chopsticks (DBCs) are difficult to recycle, which inevitably cause secondary pollution. Based on energy and environmental issues, we propose a facile strategy to fabricate floatable photocatalyst (fPC) coated onto DBCs, which can be flexibly used in water purification. The photocatalyst of titania and titanium carbide on bamboo (TiO2/TiC@b) was successfully constructed from TiC-Ti powders and DBCs using a coating technique followed heat treatment in carbon powder, and the fPC exhibited excellent photocatalytic activity under visible light irradation. The analysis results indicate that rutile TiO2 forms on TiC during heat treatment, achieving a low-density material with an average value of approximately 0.5233 g/cm3. The coatings of TiO2/TiC on the bamboo are firm and uniform, with a particle size of about 20-50 nm. XPS results show that a large amount of oxygen vacancies is generated, due to the reaction atmosphere of more carbon and less oxygen, further favoring to narrowing the band gap of TiO2. Furthermore, TiO2 formed on residual TiC would induce the formation of a heterojunction, which effectively inhibits the photogenerated electron-hole recombination via the charge transfer effect. Notably, the degradation of dye Rhodamine B (Rh.B) is 62.4% within 3 h, while a previous adsorption of 36.0% for 1 h. The excellent photocatalytic performance of TiO2/TiC@b can be attributed to the enhanced reaction at the water/air interface due to the reduced light loss in water, improved visible-light response, increased accessible area and charge transfer effect. Our findings show that the proposed strategy achieves a simple, low-cost, and mass-producible method to fabricate fPC onto the used DBCs, which is expected to applied in multiple fields, especially in waste recycling and water treatment.

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review.

Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

Oxygen vacancies induced band gap narrowing for efficient visible-light response in carbon-doped TiO2.

The band gap of rutile TiO2 has been narrowed, via the formation of oxygen vacancies (OVs) during heat treatment in carbon powder (cHT) with embedding TiO2 coatings. The narrowed band gap efficiently improves the visible light response of TiO2 coatings, to further enhance the visible-light-driven photocatalytic activity. The change in OVs during cHT has been studied by manipulation of cHT temperature and time. The effect of OVs on the band structure of nonstoichiometric TiO2-x has been further calculated by first-principles calculations. With raising the temperature, SEM images show that the nano-size fiber-like structure forms on the surface of TiO2 coatings, and the amount of the fiber-like structure significantly increases and their size changes from nano to micro under 800 °C, contributing to cause an increase in accessible surface area. The UV-Vis results reveal that the band gap of TiO2 has been narrowed during cHT, due to the formed oxygen vacancies. The XPS results further confirm that the formation of surface defects including OVs, and the XPS depth profile further shows the decreased relative amount of O whereas increased relative amount of carbon. Notably, after cHT for TiO2 coatings, the photocatalytic activity first increases then decreases with raising the temperature, achieving approximately 3 times at 850 °C. The first-principles calculation suggest that the OVs in TiO2 coatings with localized electrons could facilitate the band gap narrowing, further favoring to enhance the photocatalytic activity under visible light.

Inactivation of SARS-CoV-2 and photocatalytic degradation by TiO2 photocatalyst coatings.

The novel severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) causative agent of the COVID-19, which is a global pandemic, has infected more than 552 million people, and killed more than 6.3 million people. SARS-CoV-2 can be transmitted through airborne route in addition to direct contact and droplet modes, the development of disinfectants that can be applied in working spaces without evacuating people is urgently needed. TiO2 is well known with some features of the purification, antibacterial/sterilization, making it could be developed disinfectants that can be applied in working spaces without evacuating people. Facing the severe epidemic, we expect to fully expand the application of our proposed effective approach of mechanical coating technique (MCT), which can be prepared on a large-scale fabrication of an easy-to-use TiO2/Ti photocatalyst coating, with hope to curb the epidemic. The photocatalytic inactivation of SARS-CoV-2 and influenza virus, and the photocatalytic degradation of acetaldehyde (C2H4O) and formaldehyde (CH2O) has been investigated. XRD and SEM results show that anatase TiO2 successfully coats on the surface of Ti coatings, while the crystal structure of anatase TiO2 can be increased during the following oxidation in air. The catalytic activity towards methylene blue of TiO2/Ti coating balls has been significantly enhanced by the followed oxidation in air, showing a very satisfying photocatalytic degradation of C2H4O and CH2O. Notably, the TiO2/Ti photocatalyst coating balls demonstrate a significant antiviral activity, with a decrease rate of virus reached 99.96% for influenza virus and 99.99% for SARS-CoV-2.

Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits.

Ruthenium may replace copper interconnects in next-generation very-large-scale integration (VLSI) circuits. However, interfacial bonding between Ru interconnect wires and surrounding dielectrics must be optimized to reduce thermal boundary resistance (TBR) for thermal management. In this study, various adhesion layers are employed to modify bonding at the Ru/SiO2 interface. The TBRs of film stacks are measured using the frequency-domain thermoreflectance technique. TiN and TaN with high nitrogen contents significantly reduce the TBR of the Ru/SiO2 interface compared to common Ti and Ta adhesion layers. The adhesion layer thickness, on the other hand, has only minor effect on TBR when the thickness is within 2-10 nm. Hard X-ray photoelectron spectroscopy of deeply buried layers and interfaces quantitatively reveals that the decrease in TBR is attributed to the enhanced bonding of interfaces adjacent to the TaN adhesion layer, probably due to the electron transfer between the atoms at two sides of the interface. Simulations by a three-dimensional electrothermal finite element method demonstrate that decreasing the TBR leads to a significantly smaller temperature increase in the Ru interconnects. Our findings highlight the importance of TBR in the thermal management of VLSI circuits and pave the way for Ru interconnects to replace the current Cu-based ones.